微型led的尺寸无关电流密度-电压特性

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Pub Date : 2023-02-07 DOI:10.1109/SSLChinaIFWS57942.2023.10070937

Hang Yang, W. Huang, Yonghui Lin, Meng-yuan Zhang-Hu, Zhaojun Liu

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引用次数: 0

摘要

设计和制造了各种尺寸从10 μm到100 μm的微型led。研究了与尺寸无关的电流密度-电压特性对微型led的影响。发现尺寸效应对J-V特性(电流密度-电压)没有明显影响，这是由于优化了电流展流层的电流路径。同时，器件泄漏电流小于10-11 A, p-GaN与接触金属的接触电阻为5.9E-3 Ω•cm2。正向电压为2.36V，电流密度为10 A/cm2，外量子效率为13.6%。

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Size-Independent Current Density-Voltage Characteristic of Micro-LEDs

Various individual Micro-LEDs were designed and fabricated with size from 10 μm to 100 μm. The effects of Size-independent current density-voltage characteristic of Micro-LEDs were investigated. It is found size effect didn’t have obvious impact on the J-V characteristics (current density-voltage), because of the optimized current route of the current spreading layer. Meanwhile, the device leakage current was less than 10-11 A, while the contact resistance between p-GaN and contact metal is 5.9E-3 Ω•cm2. The forward voltage is 2.36V with the current density of 10 A/cm2, and external quantum efficiency is 13.6%.

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来源期刊

2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)

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