低功耗CMOS运算放大器12.5K至273K低温实验特性研究

2020 Argentine Conference on Electronics (CAE) Pub Date : 2020-02-01 DOI:10.1109/CAE48787.2020.9046378

J. Lipovetzky, F. Bessia, J. Guimpel, M. Pérez, M. G. Berisso

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引用次数: 0

摘要

在这项工作中，我们提出了在低温下使用的运算放大器的设计和首次表征。我们展示了放大器在12.5K至273K温度范围内的功能。测量了n沟道和p沟道MOS晶体管的漏极电流-栅极电压曲线、电阻和放大器响应。该电路允许将信号放大到100kHz，功耗为$48\mu\ mathm {W}$。

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Characterization of a low-power CMOS operational amplifier from 12.5K to 273K for low temperature experiments

In this work, we present the design and first characterization of an operational amplifier for use at cryogenic temperatures. We show the functionality of the amplifier in a range of temperatures from 12.5K to 273K. Drain current to gate voltage curves of n-channel and p-channel MOS transistors, resistors and the amplifier response were measured. The circuit allows the amplification of signals up to 100kHz with a power consumption of $48\mu\mathrm{W}$.

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2020 Argentine Conference on Electronics (CAE)

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