三维存储器的高效TSV修复方法

2013 International SoC Design Conference (ISOCC) Pub Date : 2013-11-01 DOI:10.1109/ISOCC.2013.6863974

Ilwoong Kim, Keewon Cho, Sungho Kang

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引用次数: 1

摘要

基于通硅孔(TSV)的3D堆叠存储器被认为是下一代存储器结构，但其低TSV良率是制造成本的因素之一。本文提出了一种有效的三维记忆体的TSV修复方法。该方法采用一种新的二维1-4切换技术，利用合理的面积开销修复电路，实现TSV集群故障的高效修复。因此，所提出的TSV修复方法有助于提高三维存储器的TSV良率。

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Efficient TSV repair method for 3D memories

Through-silicon-via (TSV) based 3D stacked memory is recognized as the next generation memory architecture but its low TSV yield is one of the manufacturing cost factors. In this paper, an efficient TSV repair method is proposed for 3D memories. The proposed method uses a new 2-dimensional 1-4 switching technique to enable efficient repair of clustered TSV faults using repair circuitry with reasonable area overhead. Therefore, the proposed TSV repair method can contribute the improvement of TSV yield for 3D memories.

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2013 International SoC Design Conference (ISOCC)

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