基于模拟电阻性开关存储器(RRAM)的线性系统快速求解

Zhong Sun, G. Pedretti, D. Ielmini
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引用次数: 5

摘要

具有模拟电阻开关存储器的线性系统的内存解在一个计算步骤中得到了最近的报道。在这项工作中,我们基于放大器的反馈理论,研究了用电路求解线性系统的时间复杂度。结果表明,计算时间与问题大小N显式无关,而是由关联矩阵的最小特征值支配。通过求解Toeplitz矩阵和Wishart矩阵,我们表明计算时间分别以log(N)或N1/2增加,从而表明在求解线性系统时内存计算比经典数字计算有显着的加速。对于量子计算算法所针对的稀疏正定矩阵,内存计算电路也显示出计算时间上的优势。这些结果支持内存计算作为大数据分析和机器学习的快速和节能加速器的有力候选。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fast Solution of Linear Systems with Analog Resistive Switching Memory (RRAM)
The in-memory solution of linear systems with analog resistive switching memory in one computational step has been recently reported. In this work, we investigate the time complexity of solving linear systems with the circuit, based on the feedback theory of amplifiers. The result shows that the computing time is explicitly independent on the problem size N, rather it is dominated by the minimal eigenvalue of an associated matrix. By addressing the Toeplitz matrix and the Wishart matrix, we show that the computing time increases with log(N) or N1/2, respectively, thus indicating a significant speed-up of in-memory computing over classical digital computing for solving linear systems. For sparse positive-definite matrix that is targeted by a quantum computing algorithm, the in-memory computing circuit also shows a computing time superiority. These results support in-memory computing as a strong candidate for fast and energy-efficient accelerators of big data analytics and machine learning.
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