InP/GaAsSb dhbt的缩放:在$10\ \mu \text{m}$长发射极中同时实现$f_{\text{T}}/f_{\text{MAX}}=463/829$ GHz

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/bcicts.2018.8551036

A. Arabhavi, W. Quan, O. Ostinelli, C. Bolognesi

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引用次数: 1

摘要

研究了ii型InP/GaAsSb双异质结双极晶体管(DHBTs)的标度行为，并演示了10 μm长的发射极，截止频率为$f_{\text{T}}/f_{\text{MAX}}=463/829$ GHz。如此高的$f_{\text{MAX}}$是通过基极集电极(BC)台面的积极横向缩放来实现的，这有助于降低外部BC电容。进一步横向缩放这些设备的限制进行了审查。在所有HBT中，当发射极长度为$10 \mu\text{m}$时，晶体管显示出最高的$f_{\text{MAX}}$，表明ii型dhbt具有优异的缩放性能。

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Scaling of InP/GaAsSb DHBTs: A Simultaneous $f_{\text{T}}/f_{\text{MAX}}=463/829$ GHz in a $10\ \mu \text{m}$ Long Emitter

The scaling behavior of Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) is studied and a 10 μm long emitter with cutoff frequencies of $f_{\text{T}}/f_{\text{MAX}}=463/829$ GHz and is demonstrated. Such a high $f_{\text{MAX}}$ was made possible by aggressive lateral scaling of the base-collector (BC) mesa which helps to reduce the extrinsic BC capacitance. The limitations in furthering the lateral scaling for these devices are examined. The present transistors show the highest $f_{\text{MAX}}$ for a $10 \mu\text{m}$ long emitter for any HBT, indicating the excellent scaling properties of Type-II DHBTs.

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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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