布局和工艺对三维大马士革MIM电容器射频和模拟性能的影响

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI:10.1109/BIPOL.2007.4351879

S. Crémer, N. Segura, P. Joubin, M. Marin, M. Thomas, C. Richard, S. Boret, D. Benoit, S. Bruyère

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引用次数: 3

摘要

射频和模拟设计需要高性能的MIM电容器。为了继续缩小MIM器件的尺寸，我们提出并集成了一种使用Si3N4介电介质的三维damascene MIM电容器，该电容器采用0.13 μ m BICMOS技术的铜后端。布局和工艺最近进行了优化，以达到卓越的可靠性性能，同时保持非常好的射频性能。

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Impact of layout and process on RF and analog performances of 3D damascene MIM capacitors

RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of MIM devices, we proposed and integrated a 3D damascene MIM capacitor using Si3N4 dielectric in the copper back-end of a 0.13 mum BICMOS technology. Layout and process have been recently optimized to reach excellent reliability performances while keeping very good RF performances.

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2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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