2和4µm之间的光发射:创新的有源区域设计,用于基于InP和gasb的器件

G. Boehm, S. Sprengel, K. Vizbaras, C. Grasse, T. Gruendl, R. Meyer, M. Amann
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引用次数: 1

摘要

这项工作展示了不同的方法来覆盖光谱范围从2到4 μm,基于InP和GaSb的有源区域,适用于气敏应用的光源。对于波长在2.3 μm以下的短波长,矩形和三角形的i型inp量子阱是首选,除此之外,研究了覆盖波长在4 μm以下的基于gasb的i型活性区域。另一种方法是在InP上实现ii型结构,以利用这种众所周知的材料系统用于器件制造的优势。对于不同的方法,器件设计,增长问题和应用将进行讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Light emission between 2 and 4 µm: Innovative active region designs for InP- and GaSb-based devices
This work shows different approaches to cover the spectral range from 2 to 4 μm with active regions based on InP and GaSb for devices suitable as light sources for gas-sensing applications. For shorter wavelengths up to 2.3 μm type-I InP-based quantum wells with rectangular and triangular shape are the preferred choice, beyond that GaSb-based type-I active regions were studied to cover the wavelengths up to 4 μm. An alternative method is implementing type-II structures on InP to exploit the advantages of this well-known material system for device fabrication. For the different methods device designs, growth issues and applications will be discussed.
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