The temperature distribution and the thermomechanical effects in the Cr:YAG quality modulator

Cr/sup 4+/:YAG based modulators has been used for the passively Q-switched lasers, particularly, microchip lasers. The energy in the pulse of such lasers may achieve the values nearby a few tens /spl mu/J, the peak power-nearby a few tens kWt. But at the sufficiently high energy in the laser pulse the heating processes in the absorber become sufficient. Here we analyse the possible influences of the nonuniform heating on the modulator parameters. For the simplicity, the modulator is considered as thermal isolated from the pumping source and the generating medium.