一种集成大电流PNP晶体管的大功率BiMOS

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156617

B. Bynum, D. Cave

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引用次数: 2

摘要

我们将讨论一种采用电源垂直PNP与双极/CMOS控制电路相结合的驱动IC的设计。Trqe电路提供1.0A输出电流，0.5V输入输出电压，25mA控制电流。它接受4.5到36V的电源电压，瞬态电压为±125V。

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A power BiMOS with integral high current PNP transistor

The design of a driver IC featuring a power vertical PNP combined with bipolar/CMOS control circuitry will be discussed. Trqe circuit provides 1.0A output current with 0.5V input-output voltage and 25mA control current. It accepts 4.5 to 36V supply voltage with ±125V transients.

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来源期刊

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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