F. Liu, M. Husain, Z. Li, M. Sotto, D. Burt, J. Fletcher, M. Kataoka, Y. Tsuchiya, S. Saito
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Transport properties in silicon nanowire transistors with atomically flat interfaces
We have fabricated ultra-narrow (sub-10 nm) short channel (100 nm) silicon (Si) nanowire transistors with atomically flat interfaces based on Si-on-Insulator (SOI) substrates. The raised source and drain electrodes were patterned together with the gate electrode. The smaller threshold voltage in the narrower nanowire suggests self-limiting oxidation during the gate oxide formation.
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