研究了生长时间对气液固(VLS)生长Ge/n-Si异质结电性能的影响

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI:10.1109/ISDCS49393.2020.9262999

S. Mandal, Subhrajit Sikdar, R. Saha, A. Karmakar, S. Chattopadhyay

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引用次数: 0

摘要

本文采用气-液-固(VLS)法在n-Si衬底上生长了高质量的锗薄膜(~10 nm)。采用x射线衍射(XRD)和椭偏光谱实验分别对晶体质量和薄膜厚度进行了测定。测量了Ge/n-Si异质结器件的电流-电压特性，研究了生长时间对整流性能的影响。

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Investigating the impact of growth time on the electrical performance of vapour-liquid-solid (VLS) grown Ge/n-Si hetero-junction

In this paper, a high-quality crystalline Ge thin film (~10 nm) is grown on n-Si substrate by employing vapour-liquid-solid (VLS) method. The crystalline quality and the film thickness are measured by XRD and spectroscopic ellipsometry experiments, respectively. The current-voltage characteristics of the Ge/n-Si hetero-junction device are measured and the impact of growth time on the rectification properties is studied.

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2020 International Symposium on Devices, Circuits and Systems (ISDCS)

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