利用散射对比模拟电子投影光刻中的库仑相互作用

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872659

H. Yamashita, E. Munro, J. Rouse, H. Kobinata, K. Nakajima, H. Nozue

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引用次数: 0

摘要

电子投影光刻(EPL)，如胜诉和SCALPEL，是候选的下一代光刻。我们修改了离散库仑相互作用模拟器BOERSCH，使其能够将掩膜散射电子的处理纳入模拟域。除了通常的圆形外，还可以设置任意数量和大小的环形孔作为限制孔。利用该模拟器，可以对SCALPEL鬼影接近效应校正(PEC)的分辨率和性能进行评估。因此，这种改进的BOERSCH可以为EPL工艺开发提供几乎完美的功能。

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Simulation of Coulomb interactions in electron projection lithography using scattering contrast

Electron projection lithography (EPL), such as PREVAIL and SCALPEL, are among the candidates for next generation lithography. We modified the discrete Coulomb interaction simulator BOERSCH to be capable of incorporating the treatment of mask-scattered electrons into the simulation domain. Annular apertures of arbitrary number and size also can be set as the limiting aperture in addition to the usual round shape. Using this simulator, not only the resolution but also the performance of the SCALPEL GHOST proximity effect correction (PEC) can be evaluated. Therefore, this modified BOERSCH can provide almost perfect functions necessary for the EPL process development.

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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