“智能切割”:一种有前途的新型SOI材料技术

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526518

M. Bruel, B. Aspar, B. Charlet, C. Maleville, T. Poumeyrol, A. Soubie, A. Auberton-Herve, J. Lamure, T. Barge, F. Metral, S. Trucchi

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引用次数: 57

摘要

绝缘体上硅技术似乎是低功耗，低电压技术(/spl ap/1.5 V)的关键问题，并将在ULSI发展中发挥重要作用。如今，在极薄SOI薄膜市场上，有两种SOI材料技术在竞争:SIMOX(植入式氧气分离)和BESOI(粘合和蚀刻背SOI)技术。我们开发了一种新的SOI材料技术，采用结合离子注入步骤的键合技术，旨在克服上述两种技术的剩余局限性。这个过程被开发为“改进”(植入质子空洞工程)过程，从此被称为“智能切割”。将该工艺应用于单键晶圆的制备。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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"Smart cut": a promising new SOI material technology

Silicon On Insulator technologies appear to be a key issue for low-power, low-voltage technologies (/spl ap/1.5 V) and will play a major role in ULSI developments. Today two SOI material technologies are in competition in the very thin SOI film market: SIMOX (Separation by IMplanted OXygen) and BESOI (Bond and Etch Back SOI) Technology. We have developed a new SOI material technology using a bonding technique combined with an ion implantation step, which aims to overcome the remaining limitations of both the above techniques. This process was developed as the "IMPROVE" (IMplanted PROtons Voids Engineering) process and is henceforth referred to as "Smart-cut". The process is implemented for fabrication of Unibond wafers.

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1995 IEEE International SOI Conference Proceedings

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