{"title":"宽调谐范围的变容调谐高q有源电感","authors":"Kyungjun Song, Y. Jeong, Heungjae Choi","doi":"10.1109/SOCDC.2008.4815740","DOIUrl":null,"url":null,"abstract":"This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor using tunable LC resonance circuit (HITR) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and MOS varactor. The novelty of the proposed structure is based on the increase of Q-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18 mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 640 around 5.4 GHz.","PeriodicalId":405078,"journal":{"name":"2008 International SoC Design Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Varactor tunned high-Q aictive inductor with broadband tuning range\",\"authors\":\"Kyungjun Song, Y. Jeong, Heungjae Choi\",\"doi\":\"10.1109/SOCDC.2008.4815740\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor using tunable LC resonance circuit (HITR) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and MOS varactor. The novelty of the proposed structure is based on the increase of Q-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18 mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 640 around 5.4 GHz.\",\"PeriodicalId\":405078,\"journal\":{\"name\":\"2008 International SoC Design Conference\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International SoC Design Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCDC.2008.4815740\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International SoC Design Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCDC.2008.4815740","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
本文提出了一种采用传统接地有源电感和反馈并联谐振电路的新型高q电感器。采用可调谐LC谐振电路(HITR)的高q电感由传统有源接地电感和由低q螺旋电感和MOS变容管组成的反馈并联谐振电路组成。该结构的新颖之处在于通过在旋转器结构中输入并联谐振电路来提高q因子。高q电感器采用0.18 μ m Hynix CMOS技术制造。所制电感在5.4 GHz附近的电感值在45 nH以上，q因子在640以上。
Varactor tunned high-Q aictive inductor with broadband tuning range
This paper presents a novel high-Q inductor using conventional grounded active inductor and feedback parallel resonance circuit. The proposed high-Q inductor using tunable LC resonance circuit (HITR) consists of the conventional active grounded inductor and feedback parallel resonance circuit which is composed of low-Q spiral inductor and MOS varactor. The novelty of the proposed structure is based on the increase of Q-factor by feeding parallel resonance circuit into gyrator structure. The high-Q inductor is fabricated by 0.18 mum Hynix CMOS technology. The fabricated inductor shows inductance of above 45 nH and Q-factor of over 640 around 5.4 GHz.
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