一种平均噪声系数2.2 dB的16-24 GHz CMOS SOI LNA

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2013-11-11 DOI:10.1109/CSICS.2013.6659186

T. Kanar, Gabriel M. Rebeiz

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引用次数: 20

摘要

本文提出了一种k波段低噪声放大器(LNA)，其在16-24 GHz频段的实测平均噪声系数为2.2 dB。LNA采用45纳米绝缘体半导体(SOI) CMOS工艺制造。测量的s参数在20 GHz和S11 <时的峰值增益为19.5 dB;- 10db在16- 24ghz。设计表明，CMOS SOI工艺可以提供与GaAs和SiGe器件相当的噪声性能。据作者所知，该LNA在任何CMOS工艺中实现了k波段的最低噪声系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 16-24 GHz CMOS SOI LNA with 2.2 dB Mean Noise Figure

This paper presents a K-band low-noise amplifier (LNA) with a measured mean noise figure of 2.2 dB at 16-24 GHz. The LNA is fabricated in 45 nm Semiconductor-on-Insulator (SOI) CMOS process. The measured S-parameters result a peak gain of 19.5 dB at 20 GHz and S11 <; -10 dB at 16-24 GHz. The design shows that CMOS SOI process can provide a comparable noise performance with GaAs and SiGe devices. To the best of authors' knowledge, this LNA achieves the lowest noise figure at K-band in any CMOS process.

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2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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