Variable-length gateless transistor for analog one-time-programmable memory applications

This work presents a novel embedded Analog Gateless One-Time-Programming Memory (AG-OTP), implemented by standard CMOS logic process. The NVM cell includes a gateless storage node in series with a select transistor; where the charge stored on the parasitic ONO structure. The p-channel device is programmed by channel hot hole induced hot electron injection (CHHIHE). An angled-shaped source region allows the gateless channel to be partially turned-on and gradually increase the read current level. This unique structure enable the storage of analog data as continuous read current can be readily achieved.