一种基于粗、细序列的多电平模拟闪存编程方法

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 2001-04-18 DOI:10.1109/VTSA.2001.934504

A. Kordesch, S. Awsare, J. Brennan, P. Guo, M. Hemming, P. Holzmann, Chun-Mai Liu, K. Su

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引用次数: 4

摘要

报道了一种新的两阶段编程方法，用于模拟记录和回放系统中的闪存单元。该算法有粗、细两部分，以加快记录过程。该方法用于在分辨率接近8位的4mb闪存阵列中以4khz的采样率(或8 kHz时的8分钟)存储16分钟的音频信号。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A programming method for multilevel analog flash memory using coarse and fine sequence

A new two-stage method for programming flash memory cells in an analog record and playback system is reported. The algorithm has a coarse and a fine portion to speed up the recording process. This method is used to store 16 minutes of audio signals, at a sampling rate of 4 kHz (or 8 minutes at 8 kHz) in a 4 Mb flash array with a resolution approaching 8-bit.

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2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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