{"title":"非隔离顶栅对双栅InGaZnO薄膜晶体管性能的影响","authors":"C. Zhang, Xiaodong Huang","doi":"10.1109/EDTM55494.2023.10103072","DOIUrl":null,"url":null,"abstract":"The amorphous material InGaZnO (IGZO) is sensitive to air humidity, resulting in the formation of metal-hydroxyl defects and causing stability issue of thin-film transistor (TFT). The stability issue is suppressed by depositing a metal layer directly on the IGZO layer in this work. Moreover, the mobility of the device is improved when a Ti metal layer is deposited on the IGZO semiconductor layer. The proposed TFT shows potential for switching element in Active Matrix Liquid Crystal Displays (AMLCDs) pixel unit.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of Unisolated Top Gate on Performance of Dual-Gate InGaZnO Thin-Film Transistor\",\"authors\":\"C. Zhang, Xiaodong Huang\",\"doi\":\"10.1109/EDTM55494.2023.10103072\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The amorphous material InGaZnO (IGZO) is sensitive to air humidity, resulting in the formation of metal-hydroxyl defects and causing stability issue of thin-film transistor (TFT). The stability issue is suppressed by depositing a metal layer directly on the IGZO layer in this work. Moreover, the mobility of the device is improved when a Ti metal layer is deposited on the IGZO semiconductor layer. The proposed TFT shows potential for switching element in Active Matrix Liquid Crystal Displays (AMLCDs) pixel unit.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10103072\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of Unisolated Top Gate on Performance of Dual-Gate InGaZnO Thin-Film Transistor
The amorphous material InGaZnO (IGZO) is sensitive to air humidity, resulting in the formation of metal-hydroxyl defects and causing stability issue of thin-film transistor (TFT). The stability issue is suppressed by depositing a metal layer directly on the IGZO layer in this work. Moreover, the mobility of the device is improved when a Ti metal layer is deposited on the IGZO semiconductor layer. The proposed TFT shows potential for switching element in Active Matrix Liquid Crystal Displays (AMLCDs) pixel unit.
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