金属栅极工作功能调整为未来CMOS技术

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934939

Q. Lu, R. Lin, P. Ranade, T. King, C. Hu

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引用次数: 42

摘要

CMOS晶体管是用单一金属[110]-Mo作为栅极材料制成的。[110]-Mo具有较高的功函数值，适用于pmosfet，通过注入氮气可以降低其功函数以满足nmosfet的要求。Mo功函数的变化可以通过氮注入参数来控制，这在多v /sub / T/技术中具有潜在的应用价值。TEM和EDS分析表明，经过传统的CMOS工艺后，Mo栅电极是稳定的。

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Metal gate work function adjustment for future CMOS technology

CMOS transistors were fabricated using a single metal, [110]-Mo, as the gate material. [110]-Mo shows a high work function value that is suitable for PMOSFETs, and, with nitrogen implantation, its work function can be reduced to meet the requirements of NMOSFETs. The change in Mo work function can be controlled by the nitrogen implant parameters, which is potentially useful for multiple-V/sub T/ technology. TEM and EDS analysis show that Mo gate electrodes are stable after undergoing a conventional CMOS process.

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来源期刊

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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