Preventing degradation of GaAs devices by the use of getter

Hermetically sealed semiconductor devices containing gallium arsenide (GaAs) and RF absorbers, utilizing industry gate metallization structures have been shown to leach out hydrogen in ambient as well as environmental conditioning which poison and shorten the life of the device. This paper describes manufacturing and application of getter for hydrogen, moisture and particulate to solve problem of degradation due to these contaminants. A brief history describing sources of hydrogen and mechanisms for device degradation by hydrogen is also presented in this paper.