{"title":"基于三态量子点门场效应管的多值逻辑","authors":"J. Chandy, F. Jain","doi":"10.1109/ISMVL.2008.34","DOIUrl":null,"url":null,"abstract":"This paper presents fundamental logic structures designed using novel quantum dot gate FETs with three-state characteristics. This three-state FET manifests itself as a transistor with a stable \"intermediate\" state, where the drain current remains constant over a range of input gate voltages due to a change in the threshold voltage over this range. We have developed a simplified circuit model that accounts for this intermediate state. Using this model, we have designed rudimentary logic circuits for use in multiple-valued logic circuits.","PeriodicalId":243752,"journal":{"name":"38th International Symposium on Multiple Valued Logic (ismvl 2008)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Multiple Valued Logic Using 3-State Quantum Dot Gate FETs\",\"authors\":\"J. Chandy, F. Jain\",\"doi\":\"10.1109/ISMVL.2008.34\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents fundamental logic structures designed using novel quantum dot gate FETs with three-state characteristics. This three-state FET manifests itself as a transistor with a stable \\\"intermediate\\\" state, where the drain current remains constant over a range of input gate voltages due to a change in the threshold voltage over this range. We have developed a simplified circuit model that accounts for this intermediate state. Using this model, we have designed rudimentary logic circuits for use in multiple-valued logic circuits.\",\"PeriodicalId\":243752,\"journal\":{\"name\":\"38th International Symposium on Multiple Valued Logic (ismvl 2008)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"38th International Symposium on Multiple Valued Logic (ismvl 2008)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISMVL.2008.34\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"38th International Symposium on Multiple Valued Logic (ismvl 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.2008.34","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multiple Valued Logic Using 3-State Quantum Dot Gate FETs
This paper presents fundamental logic structures designed using novel quantum dot gate FETs with three-state characteristics. This three-state FET manifests itself as a transistor with a stable "intermediate" state, where the drain current remains constant over a range of input gate voltages due to a change in the threshold voltage over this range. We have developed a simplified circuit model that accounts for this intermediate state. Using this model, we have designed rudimentary logic circuits for use in multiple-valued logic circuits.