Scaling of voltage controlled magnetic anisotropy based skyrmion memory and its neuromorphic application

Voltage controlled skyrmion memory requires less energy compared to current controlled method where voltage changes magnetic anisotropy (VCMA) and Dzyaloshinskii-Moriya interaction (DMI). Ferromagnetic (FM) and synthetic antiferromagnetic (SAFM) memory devices are simulated using electric field control method where gate and gap width are chosen as smaller than skyrmion size so that skyrmion can feel the change in voltage polarity in the neighbouring gate and moves accordingly. Scaling of memory device is performed which shows SAFM memory can be made much narrower compared to FM memory as skyrmion diameter also depends on width of the structure. Effects of device structure and skyrmion-skyrmion repulsion force on skyrmion diameter variation are shown in cylindrical structure considering effect of demagnetizing field. Apart from these, neuromorphic application is considered where skyrmion moves from central square neuron region to surrounding synapse region or vice versa by the application of voltage. Switching time, voltage range, energy and scaling of device dimensions are shown for synapse-neuron having different number of skyrmions where multiple skyrmions represent different weight in the neuromorphic circuit.