用于丰田第五代HEV/PHEV系统的1200 v RC-IGBT设计

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147591

Junpei Okawara, Masaru Senoo, T. Nishiwaki, Y. Yamashita, S. Machida, Yuma Kagata, Masaki Konishi

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引用次数: 0

摘要

我们为丰田第五代混合动力汽车和插电式混合动力汽车系统开发了一种新的1200 v反导绝缘栅双极晶体管，其结构称为肖特基和多层阳极(一种独特的载流子注入控制方法，不需要寿命控制)。与传统产品相比，开发的器件将总损耗(传导和开关损耗)降低了10%。它还减少了电源模块的零件数量，并使其尺寸减小了25%，最终使电源控制单元的尺寸缩小了13%。

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Design of 1200-V RC-IGBT for TOYOTA's 5th generation HEV/PHEV systems

We developed a new 1200-V reverse conducting insulated gate bipolar transistor with a structure called Schottky and multi-layered anode (a unique carrier injection control approach without lifetime-control) for TOYOTA's 5th generation hybrid electric vehicle and plug-in hybrid electric vehicle systems. The developed devices reduced total losses (conduction and switching losses) by 10% compared to the conventional product. It also reduced the number of parts for the power module and contributed to its 25% size reduction, ultimately contributing to the downsizing of 13% of the power control unit.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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