Yu-Long Jiang, A. Agarwal, G. Ru, X. Qu, Bingzong Li
{"title":"300℃/spl温度下镍硅化引起的杂质重分布","authors":"Yu-Long Jiang, A. Agarwal, G. Ru, X. Qu, Bingzong Li","doi":"10.1109/IWJT.2004.1306778","DOIUrl":null,"url":null,"abstract":"The dopant (arsenic and boron) redistribution induced by Ni silicidation at 300/spl deg/C is investigated by cross-section transmission electron microscopy and secondary ion mass spectroscopy. The dopant segregation at silicide/Si interface is observed. Also a high concentration dopant peak near silicide surface is revealed and attributed to void layer formation due to Kirkendall voiding effect and volume reduction after silicidation. The re-segregation during the conversion from Ni/sub 2/Si to NiSi contributes an extra boron peak in the middle region of the formed silicide film on P+/N Si.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"3 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Dopant redistribution induced by Ni silicidation at 300/spl deg/C\",\"authors\":\"Yu-Long Jiang, A. Agarwal, G. Ru, X. Qu, Bingzong Li\",\"doi\":\"10.1109/IWJT.2004.1306778\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The dopant (arsenic and boron) redistribution induced by Ni silicidation at 300/spl deg/C is investigated by cross-section transmission electron microscopy and secondary ion mass spectroscopy. The dopant segregation at silicide/Si interface is observed. Also a high concentration dopant peak near silicide surface is revealed and attributed to void layer formation due to Kirkendall voiding effect and volume reduction after silicidation. The re-segregation during the conversion from Ni/sub 2/Si to NiSi contributes an extra boron peak in the middle region of the formed silicide film on P+/N Si.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"3 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306778\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306778","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dopant redistribution induced by Ni silicidation at 300/spl deg/C
The dopant (arsenic and boron) redistribution induced by Ni silicidation at 300/spl deg/C is investigated by cross-section transmission electron microscopy and secondary ion mass spectroscopy. The dopant segregation at silicide/Si interface is observed. Also a high concentration dopant peak near silicide surface is revealed and attributed to void layer formation due to Kirkendall voiding effect and volume reduction after silicidation. The re-segregation during the conversion from Ni/sub 2/Si to NiSi contributes an extra boron peak in the middle region of the formed silicide film on P+/N Si.
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