溶胶-凝胶沉积PZT薄膜在驱动1D和2D扫描仪中的应用

A. Schroth, C. Lee, S. Matsumoto, M. Tanaka, R. Maeda
{"title":"溶胶-凝胶沉积PZT薄膜在驱动1D和2D扫描仪中的应用","authors":"A. Schroth, C. Lee, S. Matsumoto, M. Tanaka, R. Maeda","doi":"10.1109/MEMSYS.1998.659790","DOIUrl":null,"url":null,"abstract":"Despite to promising material properties, only few applications of thin (up to 5 /spl mu/m) piezoelectric PZT layers for actuation purpose of MEMS exist. To investigate actuation properties and application problems, this paper introduces the design, fabrication and characterization of 1D and 2D micro scanners actuated by a sol-gel deposited PZT layer of 1.5 /spl mu/m thickness. For the manufactured samples, measurements are carried out. After determining the relative dielectric constant of the PZT layer to about 1000 and its piezoelectric constant d/sub 31/ to 20...45 10/sup -12/ C/N, scanning angles were measured. For the ID scanner, angles between 11/spl deg/ and 35/spl deg/ could be determined, and for the 2D scanning structure 6.5/spl deg/ and 2.5/spl deg/ were observed for 10 V/sub pp/ maximum stimulation AC voltage. Deformation of the beams caused by technologically induced strain was found to change the behavior of the actuators. It can both, either decrease the device performance by increase of the mechanical compliance of the beam, or improve the performance by changing sinusoidal oscillation into a buckling-determined \"snapping\".","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"Application of sol-gel deposited thin PZT film for actuation of 1D and 2D scanners\",\"authors\":\"A. Schroth, C. Lee, S. Matsumoto, M. Tanaka, R. Maeda\",\"doi\":\"10.1109/MEMSYS.1998.659790\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Despite to promising material properties, only few applications of thin (up to 5 /spl mu/m) piezoelectric PZT layers for actuation purpose of MEMS exist. To investigate actuation properties and application problems, this paper introduces the design, fabrication and characterization of 1D and 2D micro scanners actuated by a sol-gel deposited PZT layer of 1.5 /spl mu/m thickness. For the manufactured samples, measurements are carried out. After determining the relative dielectric constant of the PZT layer to about 1000 and its piezoelectric constant d/sub 31/ to 20...45 10/sup -12/ C/N, scanning angles were measured. For the ID scanner, angles between 11/spl deg/ and 35/spl deg/ could be determined, and for the 2D scanning structure 6.5/spl deg/ and 2.5/spl deg/ were observed for 10 V/sub pp/ maximum stimulation AC voltage. Deformation of the beams caused by technologically induced strain was found to change the behavior of the actuators. It can both, either decrease the device performance by increase of the mechanical compliance of the beam, or improve the performance by changing sinusoidal oscillation into a buckling-determined \\\"snapping\\\".\",\"PeriodicalId\":340972,\"journal\":{\"name\":\"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-01-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.1998.659790\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1998.659790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 36

摘要

尽管具有良好的材料性能,但用于MEMS驱动目的的薄压电PZT层(高达5 /spl mu/m)的应用很少。为了研究驱动特性和应用问题,本文介绍了由厚度为1.5 /spl mu/m的溶胶-凝胶沉积PZT层驱动的一维和二维微扫描仪的设计、制造和表征。对于制造的样品,进行测量。测定了PZT层的相对介电常数为1000左右,压电常数d/sub 31/ to 20。45 10/sup -12/ C/N,测量扫描角。对于ID扫描仪,可以确定11/spl°/和35/spl°/之间的角度,对于2D扫描结构,在最大刺激交流电压为10 V/ subpp /时观察到6.5/spl°/和2.5/spl°/。技术诱导应变引起的梁的变形改变了执行器的行为。它既可以通过增加梁的机械顺应性来降低器件性能,也可以通过将正弦振荡转变为屈曲决定的“咔嚓”来提高性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Application of sol-gel deposited thin PZT film for actuation of 1D and 2D scanners
Despite to promising material properties, only few applications of thin (up to 5 /spl mu/m) piezoelectric PZT layers for actuation purpose of MEMS exist. To investigate actuation properties and application problems, this paper introduces the design, fabrication and characterization of 1D and 2D micro scanners actuated by a sol-gel deposited PZT layer of 1.5 /spl mu/m thickness. For the manufactured samples, measurements are carried out. After determining the relative dielectric constant of the PZT layer to about 1000 and its piezoelectric constant d/sub 31/ to 20...45 10/sup -12/ C/N, scanning angles were measured. For the ID scanner, angles between 11/spl deg/ and 35/spl deg/ could be determined, and for the 2D scanning structure 6.5/spl deg/ and 2.5/spl deg/ were observed for 10 V/sub pp/ maximum stimulation AC voltage. Deformation of the beams caused by technologically induced strain was found to change the behavior of the actuators. It can both, either decrease the device performance by increase of the mechanical compliance of the beam, or improve the performance by changing sinusoidal oscillation into a buckling-determined "snapping".
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信