{"title":"集成在SOI衬底上的基于多模干涉波导的光子调制器","authors":"R. Chuang, Mao-Teng Hsu","doi":"10.1109/OMEMS.2012.6318806","DOIUrl":null,"url":null,"abstract":"Multimode interference (MMI) waveguides-based photonic modulators integrated on silicon-on-insulator (SOI) substrates are designed, fabricated and evaluated. With 100% modulation depth achieved, the lowest rise and fall times were respectively measured to be 52 and 48 ns. The highest 3 dB bandwidth in the excess of 6.5 MHz was determined from the corresponding devices.","PeriodicalId":347863,"journal":{"name":"2012 International Conference on Optical MEMS and Nanophotonics","volume":"15 S1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multimode interference (MMI) waveguides-based photonic modulators integrated on SOI substrates\",\"authors\":\"R. Chuang, Mao-Teng Hsu\",\"doi\":\"10.1109/OMEMS.2012.6318806\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multimode interference (MMI) waveguides-based photonic modulators integrated on silicon-on-insulator (SOI) substrates are designed, fabricated and evaluated. With 100% modulation depth achieved, the lowest rise and fall times were respectively measured to be 52 and 48 ns. The highest 3 dB bandwidth in the excess of 6.5 MHz was determined from the corresponding devices.\",\"PeriodicalId\":347863,\"journal\":{\"name\":\"2012 International Conference on Optical MEMS and Nanophotonics\",\"volume\":\"15 S1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optical MEMS and Nanophotonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEMS.2012.6318806\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optical MEMS and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2012.6318806","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multimode interference (MMI) waveguides-based photonic modulators integrated on SOI substrates
Multimode interference (MMI) waveguides-based photonic modulators integrated on silicon-on-insulator (SOI) substrates are designed, fabricated and evaluated. With 100% modulation depth achieved, the lowest rise and fall times were respectively measured to be 52 and 48 ns. The highest 3 dB bandwidth in the excess of 6.5 MHz was determined from the corresponding devices.
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