一种分析铜/低k互连介质击穿失效机理的新方法

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232738

Y. Tong, Y. K. Lim, C.Q. Chen, W.Y. Zhang, J.B. Tan, D. Sohn, L. Hsia

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引用次数: 1

摘要

开发了一种新的工业方法来分析Cu/Low-k SiCOH互连上的TDDB可靠性失效。初始击穿点在封盖层与金属线交界处。需要加强在线过程控制，以改善线端轮廓和电场变化。

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A novel methodology to analyze time-dependent dielectric breakdown failure mechanism of copper/low-k interconnects

A novel industry methodology has been developed to analyze TDDB reliability failure on Cu/Low-k SiCOH interconnects. Initial breakdown point is at interface between capping layer and metal line. Inline process control needs to be tightened to improve end of line profile and electric field variation.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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