90nm CMOS宽锁定范围低功耗v带分频器

Q. Gu, Zhiwei Xu, M. Chang
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引用次数: 12

摘要

提出了一种新的注入锁定分频器(ILFD)拓扑结构,以实现高速、宽锁定范围和正交相位运算。分析了分度机理,与仿真结果吻合较好。在台积电90nm CMOS上实现了一个原型,在-3 dBm输入功率和5mw直流功耗下实现了4ghz的锁定范围(55.8 GHz-59.8 GHz)。该分频器具有最宽的锁定范围和最低的功耗,适用于v波段分频应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Wide Locking Range and Low Power V-band Frequency Divider in 90nm CMOS
A new topology for injection locked frequency divider (ILFD) is proposed to achieve high speed, wide locking range and quadrature phase operation. The dividing mechanism is analyzed and agrees well with the simulation. A prototype is implemented in TSMC 90 nm CMOS and realizes 4 GHz locking range (55.8 GHz-59.8 GHz) with -3 dBm input power and 5 mW DC power consumption. The divider attains the widest locking range with the lowest power consumption to date for V-band frequency dividing applications.
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