Boron doped amorphous carbon on n-type silicon with low negative bias by using palm oil precursor

Boron doped heterojunction of amorphous carbon solar cell were successfully fabricated using palm oil precursor in the environment of low negative bias. The open circuit voltage (Voc), current density (JSC), fill factor (FF) and efficiency (%) of boron doped without the use of negative bias (a-C/n-Si) were approximately 0.128244, 0.452821mA/cm2, 0.255398, and 0.014831%, respectively. Meanwhile, the optimize of open circuit voltage (VOC), current density (JSC), fill factor and efficiency of a-C:B/n-Si fabricated by low negative bias were 0.265508V, 5.602622mA/cm2, 0.220737, and 0.328355%, respectively. The conversion efficiency of a-C:B has been improved under the influenced of low negative bias.