电感耦合氩等离子体在InP量子阱样品中增强量子阱混合制备低损耗波导

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237253

T. Mei, H. Djie, C. Sookdhis, J. Arokiaraj

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引用次数: 0

摘要

电感耦合等离子体增强量子阱混合(ICP-QWI)技术已被用于利用氩等离子体调谐量子阱结构的带隙。该技术提供了有效的带隙调谐能力(例如，在InP衬底的量子阱激光器结构中，量子阱带隙位移可达104 nm[1])，能够实现光子集成。采用SiO/sub - 2/掩膜层进行选择性混频，获得了86 nm的差分带隙位移，差分线宽展宽为/spl sim/3 /spl Aring/。通过制作广域扩展腔激光器，证明了该无源波导的光子集成能力，测量损耗为2.98 cm/sup -1/。

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Low-loss waveguide fabrication using inductively coupled argon plasma enhanced quantum well intermixing in InP quantum well sample

The inductively coupled plasma enhanced quantum well intermixing (ICP-QWI) technology has been well established for tuning the bandgap of quantum well structure using argon plasma. This technology provides effective bandgap tuning capability (e.g., with quantum well bandgap shift as large as 104 nm in quantum well laser structure in InP substrate [1]), which is competent for implementing photonic integration. A differential bandgap shift of 86 nm with very small differential linewidth broadening of /spl sim/3 /spl Aring/ was obtained by applying selective intermixing using SiO/sub 2/ mask layer. Photonics integration capability was demonstrated by the fabrication of the broad area extended cavity lasers and the fabricated passive waveguide has a measured loss of 2.98 cm/sup -1/.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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