采用单层集成金属场效应晶体管(SLIMFET)工艺制造的高度可制造的0.2 /spl mu/m AlGaAs/InGaAs PHEMT

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-12-31 DOI:10.1109/GAAS.1995.528968

C. Havasy, T. Quach, C. Bozada, G. Desalvo, R. Dettmer, J. Ebel, J. Gillespie, K. Nakano, G. Via

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引用次数: 1

摘要

本工作是开发用于高性能0.2 /spl mu/m AlGaAs/InGaAs伪晶高电子迁移率晶体管(PHEMT)的单层集成金属场效应晶体管(SLIMFET)工艺。该工艺与MMIC制造兼容，并最大限度地减少工艺变化，周期时间和成本。该工艺采用非合金欧姆触点、选择性栅极凹槽蚀刻工艺和单栅极/源极/漏极金属沉积步骤，同时形成肖特基和欧姆触点。

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A highly manufacturable 0.2 /spl mu/m AlGaAs/InGaAs PHEMT fabricated using the single-layer integrated-metal FET (SLIMFET) process

This work is the development of a single-layer integrated-metal field effect transistor (SLIMFET) process for a high performance 0.2 /spl mu/m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT). This process is compatible with MMIC fabrication and minimizes process variations, cycle time, and cost. This process uses non-alloyed ohmic contacts, a selective gate-recess etching process, and a single gate/source/drain metal deposition step to form both Schottky and ohmic contacts at the same time.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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