混合硅晶圆级封装技术

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1986.1156981

R. Johnson, J. Davidson, R. Jaeger, D. Kerns

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引用次数: 14

摘要

将介绍将集成电路安装在硅晶圆孔中并通过两级金属化相互连接的程序。高速互连的性能将与传统的混合组件进行比较。

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Hybrid silicon wafer-scale packaging technology

Procedures developed for mounting ICs in holes in a silicon wafer and inter-connecting them, via two-level metalization, will be presented. The performance of the interconnections at high speeds will be compared with traditional hybrid assemblies.

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来源期刊

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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