Feng-Renn Juang, W. Yeh, Wei-Chih Chen, Ming-Feng Chung
{"title":"硅基远红外测热计的不同像素模式","authors":"Feng-Renn Juang, W. Yeh, Wei-Chih Chen, Ming-Feng Chung","doi":"10.23919/SNW.2017.8242321","DOIUrl":null,"url":null,"abstract":"Amorphous silicon bolometers with different pixel patterns are investigated for far infrared detection. Devices with floating resonator structure are measured for resistances and temperature coefficient of resistance (TCR) values. The results show normal leg geometry has high TCR (∼ −4%/°C) and moderate resistance. Thus the pixel pattern is suitable for infrared detecting applications.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Different pixel patterns of Si-based far infrared bolometers\",\"authors\":\"Feng-Renn Juang, W. Yeh, Wei-Chih Chen, Ming-Feng Chung\",\"doi\":\"10.23919/SNW.2017.8242321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Amorphous silicon bolometers with different pixel patterns are investigated for far infrared detection. Devices with floating resonator structure are measured for resistances and temperature coefficient of resistance (TCR) values. The results show normal leg geometry has high TCR (∼ −4%/°C) and moderate resistance. Thus the pixel pattern is suitable for infrared detecting applications.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242321\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Different pixel patterns of Si-based far infrared bolometers
Amorphous silicon bolometers with different pixel patterns are investigated for far infrared detection. Devices with floating resonator structure are measured for resistances and temperature coefficient of resistance (TCR) values. The results show normal leg geometry has high TCR (∼ −4%/°C) and moderate resistance. Thus the pixel pattern is suitable for infrared detecting applications.