MOS-NDR分频电路的分岔图

2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012) Pub Date : 2012-12-01 DOI:10.1109/ICECS.2012.6463558

J. Núñez, M. Avedillo, J. Quintana

{"title":"MOS-NDR分频电路的分岔图","authors":"J. Núñez, M. Avedillo, J. Quintana","doi":"10.1109/ICECS.2012.6463558","DOIUrl":null,"url":null,"abstract":"The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an I-V characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The analyzed circuit is an “all MOS” version of one previously reported which uses Resonant Tunneling Diodes (RTDs). The results show that the dividing ratio can be selected by modulating the input signal frequency, in a similar way to the RTD-based circuit.","PeriodicalId":269365,"journal":{"name":"2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Bifurcation diagrams in MOS-NDR frequency divider circuits\",\"authors\":\"J. Núñez, M. Avedillo, J. Quintana\",\"doi\":\"10.1109/ICECS.2012.6463558\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an I-V characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The analyzed circuit is an “all MOS” version of one previously reported which uses Resonant Tunneling Diodes (RTDs). The results show that the dividing ratio can be selected by modulating the input signal frequency, in a similar way to the RTD-based circuit.\",\"PeriodicalId\":269365,\"journal\":{\"name\":\"2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2012.6463558\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2012.6463558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

研究了一种能够实现分频的电路的性能。它由一个具有I-V特性的块组成，具有负差分电阻(NDR)，由MOS晶体管加上电感和电阻组成。分频是由分岔图中出现的周期相加序列得到的。所分析的电路是先前报道的使用谐振隧道二极管(rtd)的“全MOS”版本。结果表明，与基于rtd的电路类似，可以通过调制输入信号频率来选择分频比。

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Bifurcation diagrams in MOS-NDR frequency divider circuits

The behavior of a circuit able to implement frequency division is studied. It is composed of a block with an I-V characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The analyzed circuit is an “all MOS” version of one previously reported which uses Resonant Tunneling Diodes (RTDs). The results show that the dividing ratio can be selected by modulating the input signal frequency, in a similar way to the RTD-based circuit.

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来源期刊

2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)

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