温度对功率平面SOI MOSFET击穿特性的影响研究

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292925

E. Artamonova, A.U. Krasukov

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摘要

本文建议对功率平面SOI MOSFET在通断状态下的击穿特性进行研究，以研究热对器件可靠性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Researchs of Temperature Influence on Breakdown Characteristics of Power Planar SOI MOSFET

In this paper the researches of breakdown characteristics of power planar SOI MOSFET in on and off state is suggested to investigate the heat influence on device reliability.

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2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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