低介电常数材料的电子束光刻直接图案化

Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468) Pub Date : 1900-01-01 DOI:10.1109/IMNC.2001.984143

Ben-Chang Chen, Yee-Kai Lai, F. Ko, C. Chou, Hsuen‐Li Chen

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引用次数: 0

摘要

电子束光刻和低介电常数(low-k)材料的直接图像化是纳米制造技术的两个关键问题。本文提出了一种负色调氢硅氧烷(HSQ)薄膜的直接图像化方法，该方法可以代替现有的抗蚀剂涂布和剥离工艺。

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Direct patterning on low dielectric constant materials with electron beam lithography

Electron beam (EB) lithography and direct patterning of low-dielectric-constant (low-k) materials are two crucial issues of nanofabrication technologies. In this paper, we propose direct patterning of negative tone hydrogen silsesquioxane (HSQ) film of which can replace the use of resist processes including resist coating and stripping.

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

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