用于rf双极IC的浅沟槽和深沟槽隔离

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194752

M. Forsberg, C. Bormander, T. Johansson, T. Ko, W. Liu, M. Vellaikal, A. Cheshire

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引用次数: 14

摘要

提出了一种用于双极或BiCMOS RF-IC的新型自对准浅沟和深沟隔离，该隔离采用Poly和STI CMP步骤，具有良好的平面性。采用0.25 μm, 200mm双极外延基射频工艺描述并验证了该概念。过程数据，扫描电镜和电气数据被用来验证概念的有效性。

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Shallow and Deep Trench Isolation for use in RF-Bipolar IC:s

A novel self-aligned shallow and deep trench isolation for bipolar or BiCMOS RF-IC:s, using both Poly and STI CMP steps for excellent planarity, is presented. The concept is described and verified using a 0.25 μm, 200 mm bipolar epi-base RF process. Process data, SEM micrographs and electrical data are used to verify the validity of the concept.

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30th European Solid-State Device Research Conference

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