基于变容二极管的amc薄型可调谐吸收体的实验表征

Muthia Hanifah, Levy Olivia Nur, Taufiqqurrachman, N. Armi, Ivany Sarief, A. Munir
{"title":"基于变容二极管的amc薄型可调谐吸收体的实验表征","authors":"Muthia Hanifah, Levy Olivia Nur, Taufiqqurrachman, N. Armi, Ivany Sarief, A. Munir","doi":"10.1109/TSSA51342.2020.9310855","DOIUrl":null,"url":null,"abstract":"This paper deals with the experimental characterization of thin tunable absorber developed based on artificial magnetic conductor (AMC). To produce the tunable frequency response, the varactor diodes with varied reverse DC bias voltage are incorporated into the AMC structure of proposed absorber. By using an equivalent circuit of varactor diode, the performance of AMC-based thin tunable absorber is characterized through a simulation software. To improve the absorptivity, a resistor with the value of 470Ω is also incorporated into the AMC structure in parallel to each varactor diode. A 1.6mm thick FR4 epoxy dielectric substrate with the dimension of 104mm × 104mm is used for deploying the design as well as for the realization. The experimental characterization which is performed using a horn antenna shows that the realized absorber has a tunable frequency response from the frequency of 2.26GHz with the reflection coefficient (S11) value of -21.5dB at the reverse DC bias voltage of 0V to the frequency of 3.01GHz with the S11 value of -19.75dB at the reverse DC bias voltage of 10V. This performance is comparable to the simulation result for the proposed absorber with the varactor diode and 470Ω resistor incorporation.","PeriodicalId":166316,"journal":{"name":"2020 14th International Conference on Telecommunication Systems, Services, and Applications (TSSA","volume":"204 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Experimental Characterization of AMC-based Thin Tunable Absorber Using Varactor Diode\",\"authors\":\"Muthia Hanifah, Levy Olivia Nur, Taufiqqurrachman, N. Armi, Ivany Sarief, A. Munir\",\"doi\":\"10.1109/TSSA51342.2020.9310855\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper deals with the experimental characterization of thin tunable absorber developed based on artificial magnetic conductor (AMC). To produce the tunable frequency response, the varactor diodes with varied reverse DC bias voltage are incorporated into the AMC structure of proposed absorber. By using an equivalent circuit of varactor diode, the performance of AMC-based thin tunable absorber is characterized through a simulation software. To improve the absorptivity, a resistor with the value of 470Ω is also incorporated into the AMC structure in parallel to each varactor diode. A 1.6mm thick FR4 epoxy dielectric substrate with the dimension of 104mm × 104mm is used for deploying the design as well as for the realization. The experimental characterization which is performed using a horn antenna shows that the realized absorber has a tunable frequency response from the frequency of 2.26GHz with the reflection coefficient (S11) value of -21.5dB at the reverse DC bias voltage of 0V to the frequency of 3.01GHz with the S11 value of -19.75dB at the reverse DC bias voltage of 10V. This performance is comparable to the simulation result for the proposed absorber with the varactor diode and 470Ω resistor incorporation.\",\"PeriodicalId\":166316,\"journal\":{\"name\":\"2020 14th International Conference on Telecommunication Systems, Services, and Applications (TSSA\",\"volume\":\"204 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 14th International Conference on Telecommunication Systems, Services, and Applications (TSSA\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TSSA51342.2020.9310855\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 14th International Conference on Telecommunication Systems, Services, and Applications (TSSA","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TSSA51342.2020.9310855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文研究了基于人工磁导体(AMC)的可调谐薄吸收体的实验特性。为了产生可调谐的频率响应,将具有不同反向直流偏置电压的变容二极管集成到所提出的吸收器的AMC结构中。利用变容二极管等效电路,通过仿真软件对基于amc的薄型可调谐吸收器的性能进行了表征。为了提高吸收率,在AMC结构中还加入了一个值为470Ω的电阻,并与每个变容二极管并联。采用尺寸为104mm × 104mm的1.6mm厚的FR4环氧介电基板进行布置和实现。利用喇叭天线进行的实验表征表明,所实现的吸波器具有可调的频率响应,频率范围为2.26GHz,反向直流偏置电压为0V时反射系数(S11)值为-21.5dB,频率范围为3.01GHz,反向直流偏置电压为10V时S11值为-19.75dB。这一性能与所提出的具有变容二极管和470Ω电阻器的吸收器的模拟结果相当。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental Characterization of AMC-based Thin Tunable Absorber Using Varactor Diode
This paper deals with the experimental characterization of thin tunable absorber developed based on artificial magnetic conductor (AMC). To produce the tunable frequency response, the varactor diodes with varied reverse DC bias voltage are incorporated into the AMC structure of proposed absorber. By using an equivalent circuit of varactor diode, the performance of AMC-based thin tunable absorber is characterized through a simulation software. To improve the absorptivity, a resistor with the value of 470Ω is also incorporated into the AMC structure in parallel to each varactor diode. A 1.6mm thick FR4 epoxy dielectric substrate with the dimension of 104mm × 104mm is used for deploying the design as well as for the realization. The experimental characterization which is performed using a horn antenna shows that the realized absorber has a tunable frequency response from the frequency of 2.26GHz with the reflection coefficient (S11) value of -21.5dB at the reverse DC bias voltage of 0V to the frequency of 3.01GHz with the S11 value of -19.75dB at the reverse DC bias voltage of 10V. This performance is comparable to the simulation result for the proposed absorber with the varactor diode and 470Ω resistor incorporation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信