基于睡眠堆叠和二极管门控技术的低功耗高稳定性SRAM单元

K. Ray, B. Patro
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引用次数: 1

摘要

在本研究中,使用CADENCE virtuoso工具设计了0.18微米的静态随机存取存储器(SRAM)。由于SRAM具有较高的泄漏功耗,因此重点关注功耗和泄漏功率的改进。SRAM单元的泄漏功率和性能受到技术发展和运行速度的极大影响。总泄漏功率受亚阈值泄漏电流和栅极泄漏电流的共同作用影响较大。随着氧化层厚度的减小,栅漏电流呈指数增长。因此,需要有效的技术来解决栅极泄漏组件。在我们的设计中,在传统的SRAM单元中增加两个休眠堆叠晶体管,以减小栅极漏电流,提高存储单元的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low Power High Stability SRAM Cell with Combined Effect of Sleep- Stack and Diode Gated Technique
In this work, Static Random Access Memory (SRAM) is designed on 0.18 micron by using CADENCE virtuoso tools. It focuses on the power consumption and leakage power improvement since SRAM has high leakage power consumption. Leakage power and performance of SRAM cell is greatly affected by the development of technology and speed of operation. The total leakage power is greatly affected by the combined effect of subthreshold leakage current and gate leakage current. With the fall of oxide thickness the gate leakage current increases exponentially. Hence efficient techniques are required which will address the gate leakage component. In our design, with sleep- stack two more transistors are used in conventional SRAM cell to minimize the gate leakage current and to improve the performance of the memory cell.
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