一种CMOS运算放大器合成的新方法

P. Mandal, V. Visvanathan
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引用次数: 11

摘要

本文提出了一种新的CMOS运放电路合成方法。该方法是基于观察到MOS晶体管在饱和区域的一阶行为,使得该优化问题的成本和约束函数可以建模为凸函数。然后通过将问题表述为求解一系列凸规划来处理二阶效应。数值实验表明,对于初始猜测值变化较大的凸规划序列,其解收敛于同一设计点。这有力地表明,该方法能够确定问题的全局最优解。通过对1.6 /spl mu/ CMOS工艺的SPICE仿真验证了合成运放的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new approach for CMOS op-amp synthesis
A new approach for CMOS op-amp circuit synthesis has proposed here. The approach is based on the observation that the first order behavior of an MOS transistor in the saturation region is such that the cost and the constraint functions for this optimization problem can be modeled as convex functions. Second order effects are then handled by formulating the problem as one of solving a sequence of convex programs. Numerical experiments show that the solutions to the sequence of convex programs converges to the same design point for widely varying initial guesses. This strongly suggests that the approach is capable of determining the globally optimal solution to the problem. Performance of the synthesized op-amps has been verified against detailed SPICE simulation for a 1.6 /spl mu/ CMOS process.
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