离子植入物污染的无损检测:SEMATECH/AMD研究

Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop Pub Date : 1995-11-13 DOI:10.1109/ASMC.1995.484394

V. Wenner, J. Lowell, Jinghong Shi, L. Larson

{"title":"离子植入物污染的无损检测:SEMATECH/AMD研究","authors":"V. Wenner, J. Lowell, Jinghong Shi, L. Larson","doi":"10.1109/ASMC.1995.484394","DOIUrl":null,"url":null,"abstract":"In this paper we report on a systematic study of ion implantation equipment currently in operation or development by IC manufacturers and equipment vendors. The application of optical surface photovoltage (SPV) to both quantify and qualify bulk implant-induced contaminants in CZ P-type silicon is emphasized. We address the issue of contaminants and exemplify the use of SPV as a passive, in-line technique for assessment of the problem.","PeriodicalId":237741,"journal":{"name":"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-destructive detection of ion implant contamination: a SEMATECH/AMD study\",\"authors\":\"V. Wenner, J. Lowell, Jinghong Shi, L. Larson\",\"doi\":\"10.1109/ASMC.1995.484394\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we report on a systematic study of ion implantation equipment currently in operation or development by IC manufacturers and equipment vendors. The application of optical surface photovoltage (SPV) to both quantify and qualify bulk implant-induced contaminants in CZ P-type silicon is emphasized. We address the issue of contaminants and exemplify the use of SPV as a passive, in-line technique for assessment of the problem.\",\"PeriodicalId\":237741,\"journal\":{\"name\":\"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.1995.484394\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1995.484394","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本文中，我们报告了系统的研究离子注入设备目前在运行或开发的集成电路制造商和设备供应商。强调了光学表面光电压(SPV)在czp型硅中大量植入物诱导污染物的定量和定性中的应用。我们解决了污染物问题，并举例说明了SPV作为一种被动的在线技术来评估问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Non-destructive detection of ion implant contamination: a SEMATECH/AMD study

In this paper we report on a systematic study of ion implantation equipment currently in operation or development by IC manufacturers and equipment vendors. The application of optical surface photovoltage (SPV) to both quantify and qualify bulk implant-induced contaminants in CZ P-type silicon is emphasized. We address the issue of contaminants and exemplify the use of SPV as a passive, in-line technique for assessment of the problem.

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Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop

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