带动态偏置控制电路的摆幅增强电流复用c类压控振荡器

T. Siriburanon, W. Deng, K. Okada, A. Matsuzawa
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引用次数: 0

摘要

提出了一种摆幅增强电流复用的c类压控振荡器,理论上可以在最低功耗下实现与其他c类压控振荡器相同的相位噪声品质系数。通过NMOS和PMOS晶体管的动态偏置控制电路,实现了c类操作的摆幅增强和振荡鲁棒性。该VCO采用180nm CMOS工艺制备,振荡频率为4.6 GHz。测量的相位噪声在1 MHz偏移时为-119 dBc/Hz,同时从1.5 V电源消耗1.6 mA。实现了-189 dBc/Hz的FoM。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A swing-enhanced current-reuse class-C VCO with dynamic bias control circuits
A swing-enhanced current-reuse class-C VCO which can theoretically achieve same phase noise figure-of-merit (FoM) as other class-C VCOs at the lowest power consumption is presented. A swing enhancement in class-C operation and an oscillation robustness are achieved through dynamic bias control circuits for both NMOS and PMOS transistors. The proposed VCO has been fabricated in 180nm CMOS process while oscillating at 4.6 GHz. The measured phase noise is -119 dBc/Hz at 1 MHz offset while consuming 1.6 mA from 1.5 V supply. An FoM of -189 dBc/Hz is achieved.
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