用于高压模拟应用的SOI四栅极晶体管(G/sup 4/- fet)

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. Pub Date : 2005-12-05 DOI:10.1109/ESSCIR.2005.1541622

Suheng Chen, J. Vandersand, B. Blalock, K. Akarvardar, S. Cristoloveanu, M. Mojarradi

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引用次数: 6

摘要

提出了一种利用SOI四栅极晶体管(G/sup 4/- fet)的高压模拟应用新方法。与MOSFET相比，所提出的解决方案实现了高压工作(10 V及更高)，没有额外的制造成本(与标准SOI兼容)，并且增加了最小的设计开销。高压电流镜和差分对的测量结果显示出与MOSFET相当的高电压性能和小信号性能。通过使用高压电流镜和差分对作为基本构件，构建了一个差分放大器，并在20 V电源下进行了测试。

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SOI four-gate transistors (G/sup 4/-FETs) for high voltage analog applications

A new approach for high-voltage analog applications that utilizes SOI four-gate transistors (G/sup 4/-FETs) is presented. The proposed solution achieves high-voltage operation (10 V and higher) with no additional cost of fabrication (compatible with standard SOI) and minimal added design overhead compared to their MOSFET counterparts. Measurement results of high-voltage current mirrors and differential pairs show superior HV capability with small signal performance comparable to their MOSFET counterparts. By using the high-voltage current mirror and differential pair as basic building blocks, a differential amplifier is built and tested with a 20 V supply.

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Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.

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