纳米电子学:进化还是革命?

Mark S. Lundstrom, Philip Wong, K. Yano
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引用次数: 0

摘要

尽管存在巨大的技术开发障碍、设计挑战和高昂的成本,但CMOS技术的规模仍在继续扩大。如今,65纳米CMOS技术节点正从开发阶段走向量产阶段,而未来的45纳米、30纳米及更先进的技术节点仍在继续研发。在这些规模化技术中设计集成电路面临着新的限制。为了提供所需的性能提升、限制能耗、控制功耗和保持可靠性,维持供电和阈值电压缩放变得越来越困难。这些要求在技术、制造、晶体管结构、电路、系统、设计和架构等一系列学科中提出了一些困难。在技术方面,问题是我们是否可以继续扩展CMOS技术,以及我们是否接近ITRS路线图的终点。有什么根本的障碍吗?我们应该继续沿着传统的CMOS缩放路径减小有效氧化物厚度,提高通道迁移率,并最小化寄生,还是考虑从平面CMOS转向非平面器件结构,如三栅极和FinFET薄体晶体管?我们是否会使用纳米线和其他新颖的纳米器件,如碳纳米管和自组装分子器件?自组装和自底向上制造在制造未来系统中有多重要?在非平面CMOS之后,在更多奇异的自旋电子学和量子器件之前,我们有什么选择?在设计方面,虽然研究人员正在研究各种电路设计技术来处理工艺变化和泄漏,但我们是否可以用非平面CMOS器件和其他新型纳米器件构建系统尚不清楚。我们需要新的电路设计方法吗?我们如何将系统与大规模缩放的Si器件、非平面CMOS器件或自组装的分子器件组合在一起?这对设计界意味着什么?信息处理模式会发生转变吗?我们会从研究未来的纳米级器件、电路和系统中学到什么,这些可能会影响硅CMOS技术的规模吗?
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nanoelectronics: Evolution or Revolution?
Scaling of CMOS technology continues in spite of tremendous technology development barriers, design challenges and prohibitive costs. Today, the 65nm CMOS technology node is moving from development to high volume manufacturing while research and development continues on future technology nodes including 45nm, 30nm and beyond. Design of ICs in these scaled technologies faces new limitations. It is increasingly difficult to sustain supply and threshold voltage scaling to provide the required performance increase, limit energy consumption, control power dissipation, and maintain reliability. These requirements pose several difficulties across a range of disciplines spanning technology, fabrication, transistor structure, circuits, systems, design, and architecture. On the technology front, the question arises whether we can continue to scale CMOS technology and whether we are close to the end of the ITRS roadmap. Are there any fundamental barriers? Should we continue along the traditional CMOS scaling path reduce effective oxide thickness, improve channel mobility, and minimize parasitic or consider a more radical departure from planar CMOS to non-planar device structures such as tri-gate and FinFET thin body transistors? Will we ever use nanowires and other novel nano devices such as Carbon nanotubes and self-assembled molecular devices? How important is self-assembly and bottom-up manufacturing in making future systems? What options do we have post non-planar CMOS and before more exotic spintronics and quantum devices? On the design front, while researchers are addressing various circuit design techniques to deal with process variation and leakage, it is unclear whether we can build systems with non-planar CMOS devices and other novel nano devices. Do we need new circuit design methods? How do we put systems together either with aggressively scaled Si devices, non-planar CMOS or with self-assembled molecular devices? What are the implications for design community? Will the information processing paradigm shift? Will we learn anything from researching futuristic nanoscale devices, circuits and systems that may impact scaling of Silicon CMOS technology?
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