三维堆叠芯片对准的电气测量

R. Canegallo, Mauro Mirandola, A. Fazzi, L. Magagni, R. Guerrieri, K. Kaschlun
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引用次数: 5

摘要

本文介绍了一种基于集成CMOS电容传感器的电子系统,该系统能够确定以三维(3D)堆叠结构组装的两个芯片之间的对齐。描述了两种不同的接口电路,用于沿垂直z轴和横向X/ y轴的片上校准测量。以0.13/spl mu/m, 6金属标准CMOS工艺制作了测试芯片,对基于三维传感器的多轴对准系统进行了测试。在50/spl mu/m范围内,电容性电荷变化为1 fF / 15fF,对应的分辨率精度为0.5/spl mu/m。传感器为120/spl mu/m /倍/ 30/spl mu/m,功耗为200/spl mu/W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical measurement of alignment for 3D stacked chips
This paper presents an electronic system based on integrated CMOS capacitive sensors that enables to determine the alignment between two chips assembled in a three-dimensional (3D) stacking configuration. Two different interface circuits are described for the on-chip measurement of alignment along vertical Z-axis and lateral X/Y-axis. A test chip has been fabricated in 0.13/spl mu/m, 6 metal standard CMOS process to test the multi-axis alignment system based on 3D sensors. A capacitive charge variation of 1 fF over 15fF corresponding to a resolution accuracy of 0.5/spl mu/m over a range of 50/spl mu/m has been measured. Sensors are 120/spl mu/m /spl times/ 30/spl mu/m and power consumption is 200/spl mu/W.
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