先进键合垫结构中的电迁移

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532077

Ki-Don Lee

{"title":"先进键合垫结构中的电迁移","authors":"Ki-Don Lee","doi":"10.1109/IRPS.2013.6532077","DOIUrl":null,"url":null,"abstract":"VIATOP (VT), Aluminum Via connecting the bond pad and the Top Copper level, is the critical component for Bond Pad (BP) Electromigration (EM) in advanced technology nodes, where a smaller VT or its array is employed for maximum chip-scaling. In this study, we evaluated BP EM using various dimensions of VT, investigated the scaling effect, and proposed a BP EM model for current crowding & reservoir effect in the VT.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"312 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electromigration in advanced Bond Pad structures\",\"authors\":\"Ki-Don Lee\",\"doi\":\"10.1109/IRPS.2013.6532077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"VIATOP (VT), Aluminum Via connecting the bond pad and the Top Copper level, is the critical component for Bond Pad (BP) Electromigration (EM) in advanced technology nodes, where a smaller VT or its array is employed for maximum chip-scaling. In this study, we evaluated BP EM using various dimensions of VT, investigated the scaling effect, and proposed a BP EM model for current crowding & reservoir effect in the VT.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"312 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6532077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

VIATOP (VT)，铝制通过连接键合垫和顶部铜位，是先进技术节点中键合垫(BP)电迁移(EM)的关键组件，其中采用较小的VT或其阵列以实现最大的芯片缩放。在本研究中，我们使用VT的不同维度来评估BP EM，研究了尺度效应，并提出了VT中电流拥挤和储层效应的BP EM模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electromigration in advanced Bond Pad structures

VIATOP (VT), Aluminum Via connecting the bond pad and the Top Copper level, is the critical component for Bond Pad (BP) Electromigration (EM) in advanced technology nodes, where a smaller VT or its array is employed for maximum chip-scaling. In this study, we evaluated BP EM using various dimensions of VT, investigated the scaling effect, and proposed a BP EM model for current crowding & reservoir effect in the VT.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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