高精度CMOS带隙基准

Kaiyang Pan, Jianhui Wu, P. Wang
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引用次数: 5

摘要

提出了一种高精度带隙基准。采用指数曲率补偿技术,利用bjt的Ic-Vbe温度特性来降低温度系数。采用预稳压电路提高电源抑制比(PSRR)性能。带隙使用电流模式方法产生约500 mV的参考电压。使用传统的一阶补偿,温度系数为14.6 ppm/℃,范围从-40℃到85℃。由于曲率补偿,得到了7.04 ppm/℃的温度漂移。参考电压的PSRR在低频时达到120db。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A high precision CMOS bandgap reference
A high precision bandgap reference is presented. An exponential curvature compensation technique, which exploits the Ic-Vbe temperature characteristic of BJTs, is used to reduce the temperature coefficient (TC). A pre-regulator circuit is adopted to enhance the PSRR (power supply rejection ratio) performance. The bandgap uses the current mode approach to generate a reference voltage around 500 mV. With the conventional first-order compensation, the temperature coefficient is 14.6 ppm/degC over the range from -40degC to 85degC. Due to curvature compensation, an improved temperature drift of 7.04 ppm/degC is obtained. The PSRR of the reference voltage achieves 120 dB at low frequency.
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