55 nm SiGe BiCMOS中集总元匹配网络的150 GHz差分放大器

2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS) Pub Date : 2020-11-23 DOI:10.1109/ICECS49266.2020.9294979

I. Petricli, H. Lotfi, A. Mazzanti

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引用次数: 0

摘要

本文介绍了一种采用55纳米SiGe BiCMOS技术的紧凑d波段放大器。器件模型和设计工具首先通过对100 GHz以上基本元件的测量进行验证。然后，利用匹配网络中的集总元件设计放大器，以实现最小的面积占用。差分拓扑被开发用于抗非理想地寄生效应的鲁棒性，非理想地寄生效应是高频集总元件的关键问题。实验结果与模拟结果吻合较好。1级放大器在156 GHz和17.8 GHz带宽下达到8db增益，在0.026 mm2硅面积。2级放大器在157 GHz时显示17.4 dB增益，在0.048 mm2内显示42.7 GHz带宽。与先前报道的类似频率范围的SiGe放大器相比，在可比增益-带宽乘积下，核心区减少了2倍以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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150 GHz Differential Amplifiers with Lumped-Elements Matching Networks in 55 nm SiGe BiCMOS

This paper presents compact D-band amplifiers in 55 nm SiGe BiCMOS technology. Device models and design tools are first validated with measurements on elementary components above 100 GHz. Then, amplifiers are designed leveraging lumped components in matching networks for minimum area occupation. A differential topology is developed for robustness against parasitic effects of the non-ideal ground, a key issue with lumped components at high frequency. Experimental results are in very good agreement with simulations. The 1-stage amplifier reaches 8 dB gain at 156 GHz and 17.8 GHz bandwidth in 0.026 mm2 silicon area. The 2-stage amplifier displays 17.4 dB gain at 157 GHz with 42.7 GHz bandwidth in 0.048 mm2. Compared to previously reported SiGe amplifiers in similar frequency range, more than 2x core area reduction is demonstrated at comparable gain-bandwidth product.

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来源期刊

2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS)

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