快速存取stt - mram读写稳定性研究

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839665

T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

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引用次数: 2

摘要

结果表明，4T2MTJ和6T2MTJ-1型stt - mram在90 nm的读取操作中比SRAM更稳定，部分原因是一对mtj中的不平衡电阻RAP和RP增加了读取稳定性。然而，6T2MTJ-2 STT-MRAM由于其破坏性读出特性而不实用。对于尾部分布中最差的单元格(-5σ)， 4T2MTJ STT-MRAM的读稳定裕度大于6T2MTJ-1。

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Studies on read-stability and write-ability of fast access STT-MRAMs

It is shown that the 4T2MTJ and the 6T2MTJ-1 STT-MRAMs are more stable than SRAM at read operation in 90 nm, partly because the imbalanced resistances RAP and RP in a pair of MTJs increase the read-stability. However, the 6T2MTJ-2 STT-MRAM is not practical because of its destructive readout feature. For the worst cell (-5σ) in the tail distribution, the read-stability margin of the 4T2MTJ STT-MRAM is larger than the 6T2MTJ-1 one.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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