坚固的UHF 4H-SiC bjt具有创纪录的22.8 W/mm功率密度和8.3 dB增益

2006 64th Device Research Conference Pub Date : 2006-06-26 DOI:10.1109/DRC.2006.305163

F. Zhao, I. Wurfl, K. Torvik, Johnson Chiu, M. Mallinger, J. Torvik, B. Zeghbroeck

{"title":"坚固的UHF 4H-SiC bjt具有创纪录的22.8 W/mm功率密度和8.3 dB增益","authors":"F. Zhao, I. Wurfl, K. Torvik, Johnson Chiu, M. Mallinger, J. Torvik, B. Zeghbroeck","doi":"10.1109/DRC.2006.305163","DOIUrl":null,"url":null,"abstract":"Feng Zhaol, Ivan-Perez Wurfll, Kristoffer Torvikl, John Chiu2, Mike Mallinger2, John Torvikl, and Bart Van Zeghbroeck\" 3 'Advanced Power Technology Colorado, Advanced Power Technology Inc., Boulder, CO, 80301, USA 2Advanced Power Technology RF, Advanced Power Technology Inc., Santa Clara, CA, 95051, USA 3Department of Electrical and computer Engineering, University of Colorado, Boulder, CO 80309, USA Phone: (303)442-4250, fax: (303)442-4251, email: fzhaogadvancedpower.com","PeriodicalId":259981,"journal":{"name":"2006 64th Device Research Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Rugged UHF 4H-SiC BJTs with Record 22.8 W/mm Power Density and 8.3 dB Gain\",\"authors\":\"F. Zhao, I. Wurfl, K. Torvik, Johnson Chiu, M. Mallinger, J. Torvik, B. Zeghbroeck\",\"doi\":\"10.1109/DRC.2006.305163\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Feng Zhaol, Ivan-Perez Wurfll, Kristoffer Torvikl, John Chiu2, Mike Mallinger2, John Torvikl, and Bart Van Zeghbroeck\\\" 3 'Advanced Power Technology Colorado, Advanced Power Technology Inc., Boulder, CO, 80301, USA 2Advanced Power Technology RF, Advanced Power Technology Inc., Santa Clara, CA, 95051, USA 3Department of Electrical and computer Engineering, University of Colorado, Boulder, CO 80309, USA Phone: (303)442-4250, fax: (303)442-4251, email: fzhaogadvancedpower.com\",\"PeriodicalId\":259981,\"journal\":{\"name\":\"2006 64th Device Research Conference\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 64th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2006.305163\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 64th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2006.305163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

赵峰，Ivan-Perez Wurfll, Kristoffer Torvikl, John chi2, Mike Mallinger2, John Torvikl和Bart Van Zeghbroeck“3’Advanced Power Technology Colorado, Advanced Power Technology Inc, Boulder, CO .， 80301, USA 2Advanced Power Technology RF, Advanced Power Technology Inc, Santa Clara, CA, 95051, USA 3科罗拉多大学电气与计算机工程系，Boulder, CO .， 80309电话:(303)442-4250，传真:(303)442-4251，电子邮件:fzhaogadvancedpower.com

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Rugged UHF 4H-SiC BJTs with Record 22.8 W/mm Power Density and 8.3 dB Gain

Feng Zhaol, Ivan-Perez Wurfll, Kristoffer Torvikl, John Chiu2, Mike Mallinger2, John Torvikl, and Bart Van Zeghbroeck" 3 'Advanced Power Technology Colorado, Advanced Power Technology Inc., Boulder, CO, 80301, USA 2Advanced Power Technology RF, Advanced Power Technology Inc., Santa Clara, CA, 95051, USA 3Department of Electrical and computer Engineering, University of Colorado, Boulder, CO 80309, USA Phone: (303)442-4250, fax: (303)442-4251, email: fzhaogadvancedpower.com

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 64th Device Research Conference

自引率

0.00%

发文量